发明名称 |
E-beam voltage potential circuit performance library |
摘要 |
Point-by-point image contrast values are generated from secondary electron collection during unbiased electron or ion beam bombardment of an integrated circuit (IC) in a vacuum environment to quantify the physical and electrical integrity of connections within the device. These values are stored for each type of circuit cell under standard conditions to quantify and check the performance of individual cells on the device.
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申请公布号 |
US6952106(B1) |
申请公布日期 |
2005.10.04 |
申请号 |
US20030681544 |
申请日期 |
2003.10.08 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
NG WILLIAM;WEAVER KEVIN;GEMMILL ZACHARY JOSHUA |
分类号 |
G01R31/307;(IPC1-7):G01R31/307 |
主分类号 |
G01R31/307 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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