Method of forming an insulator between features of a semiconductor device

摘要

A method of forming an insulator between features of a semiconductor device. An insulating material such as high-density plasma (HDP) oxide is deposited over and between features formed on a semiconductor device. The height of the insulating material between the features is preferably less than the height of the features. A sputter process or other removal process is used to decrease the insulating material height of the features and decrease the insulating material height between the features. The insulating material is removed from over the top surface of the features, and a chemical-mechanical polish (CMP) process is used to lower the top surface of the features, stopping on the insulating material between the features.