发明名称 |
3D polysilicon ROM and method of fabrication thereof |
摘要 |
A 3D polysilicon ROM including an isolated SiO<SUB>2 </SUB>layer on a silicon substrate, and an N+ polysilicon layer on the isolated SiO<SUB>2 </SUB>layer. The N+ polysilicon layer is further defined by a plurality of parallel, separate word lines. A first oxide layer fills the space between the word lines. A dielectric layer is deposited on the word lines and the first oxide layer. A P- polysilicon layer is deposited on the dielectric layer and further defines a plurality of parallel, separate bit lines. The bit lines overlap the word lines, from a top view, to form an approximately cross shape. The neck structure may be individually formed between the P- and N+ polysilicon layers by wet etching the dielectric layer with dilute hydrofluoric acid. A second oxide layer fills the space between the bit lines and is on the word lines and the first oxide layer.
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申请公布号 |
US6952038(B2) |
申请公布日期 |
2005.10.04 |
申请号 |
US20030728767 |
申请日期 |
2003.12.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSU TZU-HSUAN;LEE MING-HSIU;LUNG HSIANG-LAN;WU CHAO-I |
分类号 |
H01L21/336;H01L27/06;H01L31/113;(IPC1-7):H01L31/113 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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