| 摘要 |
The invention encompasses methods of forming silicide interconnects over silicon comprising substrates. In one implementation, a first layer comprising a metal and a non-metal impurity is formed over a region of a silicon comprising substrate where a silicide interconnection is desired. An elemental metal comprising second layer is formed over the first layer. The substrate is annealed to cause a reaction between at least the elemental metal of the second layer and silicon of the substrate region to form a silicide of the elemental metal of the second layer. In another considered aspect, a method of forming a silicide interconnect over a silicon comprising substrate includes providing a buffering layer to silicon diffusion between a refractory metal comprising layer and a silicon containing region of a substrate. The substrate is annealed under conditions effective to diffuse at least some of at least one of the refractory metal and the silicon through the buffering layer to form a silicide of the refractory metal, with the buffering layer during the annealing reducing silicon consumption from the region over that which would otherwise occur under the same annealing conditions were the buffering layer not present. The invention also encompasses a method of forming a stack of refractory metal nitride over refractory metal silicide over silicon includes providing a silicon comprising substrate.
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