发明名称 Semiconductor integrated circuit device and electronic card using the same
摘要 A semiconductor integrated circuit device includes a semiconductor region of a first conductivity type. A first insulated-gate field effect transistor having a source/drain region of a second conductivity type connected to an output terminal is formed on the semiconductor region. Further, a semiconductor region of a second conductivity type connected to the gate of the transistor is formed adjacent to the source/drain region of the transistor on the semiconductor region.
申请公布号 US6952027(B2) 申请公布日期 2005.10.04
申请号 US20030722598 申请日期 2003.11.28
申请人 发明人
分类号 H01L25/00;G06K19/07;H01L23/00;H01L23/02;H01L23/62;H01L27/02;H01L27/04;H01L27/092;H01L27/105;H01L27/146;H01L29/76;H02H9/00;(IPC1-7):H01L29/76 主分类号 H01L25/00
代理机构 代理人
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