发明名称 |
Semiconductor integrated circuit device and electronic card using the same |
摘要 |
A semiconductor integrated circuit device includes a semiconductor region of a first conductivity type. A first insulated-gate field effect transistor having a source/drain region of a second conductivity type connected to an output terminal is formed on the semiconductor region. Further, a semiconductor region of a second conductivity type connected to the gate of the transistor is formed adjacent to the source/drain region of the transistor on the semiconductor region.
|
申请公布号 |
US6952027(B2) |
申请公布日期 |
2005.10.04 |
申请号 |
US20030722598 |
申请日期 |
2003.11.28 |
申请人 |
|
发明人 |
|
分类号 |
H01L25/00;G06K19/07;H01L23/00;H01L23/02;H01L23/62;H01L27/02;H01L27/04;H01L27/092;H01L27/105;H01L27/146;H01L29/76;H02H9/00;(IPC1-7):H01L29/76 |
主分类号 |
H01L25/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|