Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry

摘要

A method of forming memory circuitry sequentially includes forming a plurality of metal interconnect lines over a semiconductive substrate. A plurality of memory cell storage devices comprising voltage or current controlled resistance setable semiconductive material are then formed. In one implementation, a method of forming integrated circuitry includes forming a metal interconnect line over a semiconductive substrate. A device comprising two metal comprising electrodes separated by a voltage or current controlled resistance setable semiconductive material is formed. The resistance setable a semiconductive material is formed after forming the metal interconnect line.