CIRCUIT FOR GENERATING SUBSTRATE VOLTAGE OF SEMICONDUCTOR MEMORY,申请号KR19990000818-传众专利搜索

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发明名称	CIRCUIT FOR GENERATING SUBSTRATE VOLTAGE OF SEMICONDUCTOR MEMORY
摘要
申请公布号	KR100518240(B1)	申请公布日期	2005.10.04
申请号	KR19990000818	申请日期	1999.01.14
申请人		发明人
分类号	G11C5/14;(IPC1-7):G11C5/14	主分类号	G11C5/14
代理机构		代理人
主权项
地址

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