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发明名称
以薄膜层进行铜导线晶片之焊线制程方法
摘要
本发明提出一种以薄膜层进行铜导线晶片之焊线制程方法,其目的在于解决知铜导线晶片于焊线时,因铜焊垫氧化而导致焊点强度不佳,进而影响制程良率之问题。本发明所提出之以薄膜层进行铜导线晶片之焊线制程方法,其包含提供一晶片,该晶片具有一铜焊垫;提供一溶液使得该些铜焊垫上形成氧化亚铜薄膜;以及制作一焊线于该铜焊垫,并同时提供一超音波移除该氧化亚铜薄膜,使得该焊线的焊点建立于该铜焊垫上。
申请公布号
TW200532826
申请公布日期
2005.10.01
申请号
TW093108355
申请日期
2004.03.26
申请人
国立中正大学
发明人
郑友仁;邱桑茂
分类号
H01L21/60
主分类号
H01L21/60
代理机构
代理人
洪尧顺
主权项
地址
嘉义县民雄乡三兴村160号
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