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发明名称
基板处理装置及半导体装置之制造方法
摘要
基板处理装置包含有:处理容器,系藉由排气系统排气,且具有用以保持被处理基板之基板保持台,并于内部区隔出作业空间者;处理气体供给路,系用以将蚀刻气体导入前述处理容器中者;电浆产生源,系于前述作业空间形成电浆者;及高频源,系与前述基板保持台结合者,又,前述处理容器内具有遮蔽板,该遮蔽板系将前述作业空间分割成包含前述被处理基板之表面之第1作业空间部分与由前述作业空间剩余之领域所构成之第2作业空间部分,且于前述遮蔽板上形成具有大于前述被处理基板之大小之开口部。
申请公布号
TW200532793
申请公布日期
2005.10.01
申请号
TW093108689
申请日期
2004.03.30
申请人
富士通股份有限公司
发明人
置田阳一;揖斐恒治;铃木实;立野勇一
分类号
H01L21/3065
主分类号
H01L21/3065
代理机构
代理人
恽轶群;陈文郎
主权项
地址
日本
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