| 摘要 |
The invention relates to a method for making an anisotropic conductive film with pointed conductive inserts. The method comprises the etching of at least one pattern (C 1 , K 1 ) in a single crystal substrate ( 15 ) in order to form at least one cell ( 22, 26 ) with a bottom intended for drawing the contour of an end of an insert ( 23, 27 ). The drawing of the pattern is for having at least one protruding tip appear in the bottom of the cell during the etching of the pattern along the ( 100 ) crystallographic plane of the substrate with limiting ( 111 ) or ( 110 ) planes of the pattern. The invention is applied to microconnector technology.
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