Field effect transistor with a heterojunction using a semiconductor with a base of gallium and indium phosphide for improved performance

摘要

Field effect transistor with a heterojunction comprises a substrate of gallium arsenide (GaAs) and at least one layer of metal phosphide including at least the elements gallium and indium so that : (a) the chemical phosphide compound has a mesh parameter at variance with the substrate; (b) the chemical phosphide compound is under elastic stress. An independent claim is also included for the production of this field effect transistor.