发明名称 |
Hydrogen plasma photoresist strip and polymeric residue cleanup process for low dielectric constant materials |
摘要 |
A method ( 100 ) of fabricating an electronic device ( 200 ) formed on a semiconductor wafer. The method forms a layer ( 215 ) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in ( 216 ) a fixed position relative to the layer of the first material. The method also forms at least one void ( 220 ) through the layer of the first material in response to the photoresist layer. Further, the method subjects ( 106 ) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.
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申请公布号 |
US2005215050(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050140771 |
申请日期 |
2005.05.31 |
申请人 |
SMITH PATRICIA B;EISSA MONA M |
发明人 |
SMITH PATRICIA B.;EISSA MONA M. |
分类号 |
G03F7/42;H01L21/306;H01L21/311;H01L21/461;H01L21/4763;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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