Charged particle beam photolithography machine, standard substrate for correcting misalignment factor of charged particle beam photolithography machine, correcting method for charged particle beam photolithography machine, and method of manufacturing electronic device

摘要

A charged particle beam photolithography machine includes an electron gun, a deflector, a wafer stage, a standard substrate formed with a chip-shaped first mark group having a plurality of first marks and a chip-shaped second mark group having a plurality of second marks, a correction map having misalignment factors of the first marks based on positions of the second marks, and a deflection control unit for controlling an amount of deflection in the deflector. The charged particle is irradiated on a wafer while the deflection control unit makes reference to the correction map and corrects the amount of deflection as equivalent to the misalignment factors.