| 摘要 |
A dynamic type semiconductor memory apparatus performs an operation of continuous column access at a high speed while minimizing an increase of a chip size. The dynamic type semiconductor memory apparatus includes first and second memory cell groups divided based on a column address, a first bit line connected to the first memory cell group, a second bit line connected to the second memory cell group, first and second local data lines, and a column selection unit configured to connect the first and second bit lines to the first and second local data line based on a column address. The dynamic type semiconductor memory apparatus further includes first and second master data line, a local data line selecting unit configured to connect the first and second local data lines to the first and second master data lines, respectively, a DBR configured to read data from the first or second master data lines, and a DWB configured to write data to the first or second master data lines.
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