| 摘要 |
An integrated circuit, in accordance with one embodiment of the present invention, includes a first device under test (DUT) module coupled to a first ring oscillator module and a second DUT module coupled to a second ring oscillator module. A dielectric layer of the first DUT is stressed during a first mode, thereby causing time dependent dielectric breakdown in the first dielectric layer. A dielectric layer of the second DUT is maintained as a reference. The operating frequency of the first ring oscillator module, during a second mode, is a function of a gate leakage current of the stressed dielectric layer. The operating frequency of the second ring oscillator module, during the second mode, is a function of a gate leakage current the reference dielectric layer. The integrated circuit may also include a comparator module for generating an output signal as a function of a difference between the operating frequency of the first and second ring oscillator modules.
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