发明名称 |
NITRIDE BASED LED WITH A P-TYPE INJECTION REGION |
摘要 |
<p>An LED chip (2) is composed of a p-GaN layer (10), an n-GaN layer (14), and an MQW emission layer (12) that is sandwiched between the GaN layers (10 and 14). Each layer is made of a GaN semiconductor. Light exits the LED chip (2) through the n-GaN layer (14). A p-electrode (16) of the LED chip (2) has a surface profile (24B) defined by a plurality of columnar projections (24A) formed in a uniformly distributed relation on the surface facing toward the p-GaN layer (10). The p-electrode (16) is in contact with the p-GaN layer (10) at the top surface of each projection (24A).</p> |
申请公布号 |
WO2005091388(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
WO2005JP05296 |
申请日期 |
2005.03.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NAGAI, HIDEO |
发明人 |
NAGAI, HIDEO |
分类号 |
H01L33/06;H01L33/10;H01L33/14;H01L33/22;H01L33/32;H01L33/38;H01L33/42;H01L33/50;H01L33/54;H01L33/56;H01L33/60;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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