发明名称 |
Halbleiterchipgehäuse mit Drain-Klemme |
摘要 |
A semiconductor die package including a semiconductor die including a first surface, a second surface, and a vertical power MOSFET having a gate region and a source region at the first surface a drain region at the second surface. A drain clip having a major surface is electrically coupled to the drain region. A gate lead is electrically coupled to the gate region. A source lead is electrically coupled to the source region. A non-conductive molding material encapsulates the semiconductor die. The major surface of the drain clip is exposed through the non-conductive molding material. |
申请公布号 |
DE10393232(T5) |
申请公布日期 |
2005.09.29 |
申请号 |
DE2003193232T |
申请日期 |
2003.09.17 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORP., SOUTH PORTLAND |
发明人 |
MADRID, RUBEN;QUINONES, MARIA CLEMENS Y. |
分类号 |
H01L23/495 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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