发明名称 High frequency reaction processing system
摘要 A high frequency reaction processing system comprising an outer container ( 40 ) made of a dielictric material and having two end faces, which can close the inner cavity, one or more high frequency wave coupling portion ( 42 ) disposed at arbitrary position on the outer surface of the outer container ( 40 ), one or more inner container ( 41 ) made of a dielectric material and having two end faces, which can closeg the inner cavity, disposed at a position for receiving a high frequency wave guided through the high frequency wave coupling portion ( 42 ) without touching the inner side face of the outer container ( 40 ), and a covering portion ( 43 ) made of a conductive material, for covering the outer surface of the outer container except for the area occupied with the high frequency wave coupling portion ( 42 ) and sustaining the potential at a level equal to the ground potential of a waveguide line.
申请公布号 US2005212626(A1) 申请公布日期 2005.09.29
申请号 US20040513427 申请日期 2004.11.02
申请人 TAKAMATSU TOSHIYUKI 发明人 TAKAMATSU TOSHIYUKI
分类号 H01P1/20;H01P3/12;H05B6/64;H05B6/80;(IPC1-7):H01P1/20 主分类号 H01P1/20
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