发明名称 Method of fabricating inductor and structure formed therefrom
摘要 An inductor formed on a substrate having a dielectric layer thereon is disclosed. The inductor includes a first inductor pattern, a second inductor pattern a third inductor pattern. The first inductor pattern is formed within the dielectric layer, the second inductor pattern is formed on the first inductor pattern and electrically connected thereto, and the third inductor pattern is formed on the second inductor pattern and electrically connected thereto, wherein the first inductor pattern, the second inductor pattern, and the third inductor pattern have similar pattern. Because the thickness of the inductor can be increased by forming a multi-layer inductor structure, the resistance of the inductor, therefore, is reduced.
申请公布号 US2005212641(A1) 申请公布日期 2005.09.29
申请号 US20040810435 申请日期 2004.03.25
申请人 HUNG CHIEN-CHOU;TSENG HUA-CHOU;HSU TSUN-LAI;FAN CHENG-WEN;CHIN CHIA-HUNG;LIN ELLIS 发明人 HUNG CHIEN-CHOU;TSENG HUA-CHOU;HSU TSUN-LAI;FAN CHENG-WEN;CHIN CHIA-HUNG;LIN ELLIS
分类号 H01F5/00;H01F41/04;(IPC1-7):H01F5/00 主分类号 H01F5/00
代理机构 代理人
主权项
地址