Programming method of phase-change memory array e.g. phase change random access memory array, involves applying set current pulse whose minimum current level in any stage is higher than reference current level, to memory cells

摘要

The method involves applying a set current pulse having predetermined stages to phase-change memory cells of the array to change the cells to the set resistance state. The minimum current level of the set current pulse applied to the memory cells in any stage is higher than the reference current level for the cells of the array. A given current level of the set current pulse is sequentially reduced from stage to stage. An independent claim is also included for a write drive circuit of phase-change memory.