| 发明名称 |
SiN FILM SELECTIVE ETCHING SOLUTION AND ETCHING METHOD |
| 摘要 |
<p>There is provided a method of performing selective low-temperature wet etching of an SiN film against an SiO film and Si. Further, there is provided a solution for selective etching of an SiN film, comprising hydrogen fluoride, an ether solvent and/or a fluorinated ether solvent optionally together with water.</p> |
| 申请公布号 |
WO2005091347(A1) |
申请公布日期 |
2005.09.29 |
| 申请号 |
WO2005JP04494 |
申请日期 |
2005.03.15 |
| 申请人 |
DAIKIN INDUSTRIES, LTD.;ITANO, MITSUSHI;WATANABE, DAISUKE |
发明人 |
ITANO, MITSUSHI;WATANABE, DAISUKE |
| 分类号 |
H01L21/308;C09K13/08;H01L21/306;H01L21/311;(IPC1-7):H01L21/308 |
主分类号 |
H01L21/308 |
| 代理机构 |
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