| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems relating to techniques to increase performance in microfabrication of a semiconductor device using high energy rays, X-rays, electron beams or EUV light, and to provide a positive resist composition having all satisfying high sensitivity, high resolution, a preferable pattern profile, preferable line edge roughness and preferable PED (post exposure delay) characteristics in vacuum, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition comprises: (A) a resin containing a repeating unit having a specified styrene skeleton, the resin insoluble or hardly soluble with an alkali developing solution and converted into soluble with an alkali developing solution by the effect of an acid; (B) a compound which generates an acid by irradiation of active rays or radiation; and (C) an organic basic compound. The method for forming a pattern is carried out by using the above composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
