| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the occurrence of a side lobe at a side of a pattern, and to also suppress reduction in film thickness of a photoresist on a semiconductor substrate. <P>SOLUTION: A halftone phase shifting mask includes: a transparent substrate 103; a halftone phase shifting film 101 which is formed on the transparent substrate 103 and is provided with an opening 150 through which transmitted light passes, and which reverses the phase of transmitted light passing through the opening 150 by 180°; and a film 102 which consists of a film which reverses the phase of transmitted light passing through the halftone phase shifting film 101 by 180°, and which is formed in a dot shape within a region of the halftone phase shifting film 101 at a predetermined distance from the boundary between the halftone phase shifting film 101 and the opening 150. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
