发明名称 ELECTROOPTICAL DEVICE, MANUFACTURING METHOD FOR ELECTROOPTICAL DEVICE AND ELECTRONIC EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide an electrooptical device with improved yield by preventing luminescence failure and a narrow light emitting area of a luminous layer due to a short circuit, and to provide an manufacturing method for the electrooptical device and electronic equipment. <P>SOLUTION: A positive-hole transport layer 32 formed between the luminous layer 31 and a pixel electrode 25 is formed to have film thickness so that a surface contacting the luminous layer 31 is flat. Film thickness t2 of the positive-hole transport layer 32 is thicker than film thickness t1 of a wiring layer 34 located below the pixel electrode 25. Therefore, the luminous layer 31 can be formed on the positive-hole transport layer 32 whose surface is made flat. Thereby, when a metal layer 40 such as remainder of a metal pattern exists under the positive-hole transport layer 32, the short circuit between the pixel electrode 25 and the negative electrode 33 is prevented. Therefore, the incidence of a defective article with the luminescence failure or the narrow light emitting area of the luminous layer 31 due to the short circuit can be reduced, and the yield can be improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268137(A) 申请公布日期 2005.09.29
申请号 JP20040081522 申请日期 2004.03.19
申请人 SEIKO EPSON CORP 发明人 ISHIGURO HIDETO;NOZAWA RYOICHI
分类号 H01L51/50;H05B33/10;H05B33/14;H05B33/22 主分类号 H01L51/50
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