| 摘要 |
PROBLEM TO BE SOLVED: To realize a fine shape of the gate without damaging the characteristics of a transistor. SOLUTION: The method of manufacturing the transistor comprises processes of forming an SiO<SB>2</SB>film 4 on a semiconductor substrate 3, forming an opening 6 in a resist film 5 formed on the SiO<SB>2</SB>film 4, forming an opening 7 by removing part of the SiO<SB>2</SB>film 4 by etching with the resist film 5 as a mask, forming a recessed portion 8 in a surface region of the semiconductor substrate 3 by removing part of the surface region of the semiconductor substrate 3 immediately below the opening 7 by etching with the SiO<SB>2</SB>film 4 as a mask, forming a BCB film 9 so as to cover the recessed portion 8 immediately below the opening 7 and the edge of the SiO<SB>2</SB>film 4 on the side of the opening 7, forming a resist film 10 on the BCB film 9 and the forming a third opening 11 smaller than the second opening 7 above the second opening 7, forming an opening 12 by removing part of the BCB film 9 formed in the recessed portion 8 immediately below the opening 11 by anisotropic etching with the resist film 10 as a mask, and forming a gate electrode 13 with respect to the opening 12. COPYRIGHT: (C)2005,JPO&NCIPI
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