发明名称 |
Angled implant for shorter trench emitter |
摘要 |
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
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申请公布号 |
US2005212039(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050137040 |
申请日期 |
2005.05.24 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
FRANCIS RICHARD;NG CHIU |
分类号 |
H01L21/265;H01L21/331;H01L21/336;H01L29/08;H01L29/739;H01L29/78;H01L31/062;(IPC1-7):H01L31/062 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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