发明名称 HIGH FREQUENCY DEVICE AND ITS FABRICATION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide an extremely small high frequency device having substantially same size as that of a functional element chip. <P>SOLUTION: The high frequency device comprises: a device chip 30; a functional element part 22 and an internal connection electrode 23 provided on the device chip 30, a gap 70 formed around the functional element part 22; a sealing resin layer 60 provided to surround the air gap 70, and an external connection electrode 40 to be connected with an internal connection electrode 23, wherein the sealing resin layer 60 is provided on the side for forming the functional element part above the device chip 30 to bury the internal connection electrode 23 and the air gap 70, and the external connection electrode 40 is carried on the outer surface of the sealing resin layer 60. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268297(A) 申请公布日期 2005.09.29
申请号 JP20040074602 申请日期 2004.03.16
申请人 HITACHI MEDIA ELECTORONICS CO LTD 发明人 MATSUMOTO KUNIO;YAMAGUCHI YOSHIHIDE
分类号 H01L23/12;H03H3/02;H03H3/08;H03H9/02;H03H9/17;H03H9/25 主分类号 H01L23/12
代理机构 代理人
主权项
地址
您可能感兴趣的专利