发明名称 PLASMA PROCESSING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing device which is capable of generating stable plasma of which control range of work distance is broad under atmospheric pressure, and in which low running cost and high-speed processing can be made compatible. <P>SOLUTION: This device is provided with the main electrodes 5, 31 to be opposed against by pinching a plasma processing space 15. Furthermore, this is provided with a side electrode 6 facing the side faces 5B-1, 5B-2 of the main electrode 5, and a side electrode 32 facing the side faces 31B-1, 31B-2 of the main electrode 5. Therefore, in addition to the plasma processing space 15 in between the main electrode 5 and the main electrode 31, a space in between the side-face of the main electrodes 5, 31 and the side-face electrodes 6, 31 can form an electric field as a preliminary electric discharge regions 16-1, 16-2, and by this electric field, treatment gas in the preliminary electric discharge regions 16-1, 16-2 can be turned into plasma. Electrons and exciton by the plasma generated in the preliminary electric discharge regions 16-1, 16-2 can be supplied directly to the plasma processing space 15. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268170(A) 申请公布日期 2005.09.29
申请号 JP20040082701 申请日期 2004.03.22
申请人 SHARP CORP 发明人 SUGIYAMA AKIRA;KITAMURA SHUICHI;MURAKAMI KOJI;TAKAHASHI DAISUKE;YOSHIMOTO SHOZO
分类号 H05H1/24;C23C16/50;C23F1/00;H01J37/32;H01L21/304;H01L21/3065 主分类号 H05H1/24
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