| 摘要 |
PROBLEM TO BE SOLVED: To lower on-voltage of SiC-IGBT, whose inverted channel's channel resistance is high due to the influence from the surface level of the interface between a gate insulation film and a base layer, and whose on-voltage is high. SOLUTION: An embedded collector region is partially formed onto a base layer formed on an emitter layer of an SiC semiconductor. A channel layer is formed onto the base layer and embedded collector region to make up a storage-type channel. This accumulates holes on the top of the channel layer at the on time, and a low-resistance channel is formed. Current through the hole flows through the channel of the collector region to the emitter layer, becoming base current for an npn transistor made up of the embedded collector region, base layer, and emitter layer. COPYRIGHT: (C)2005,JPO&NCIPI
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