| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based hetero junction transistor capable of being made to be high output power, high withstand voltage, high speed, and high frequency. SOLUTION: The hetero junction field effect transistor includes a buffer layer (3), a channel layer (4), a spacer layer (5), and a barrier layer (6) formed in this order on a substrate (2). The channel layer comprises GaN or InGaN. The barrier layer comprises InAlN represented by a general formula: In<SB>1-x</SB>Al<SB>x</SB>N (I). In the general formula (I), x is a numeral of a range of 0.75<x<0.95, and the thickness of the barrier layer is 3 to 50 nm. COPYRIGHT: (C)2005,JPO&NCIPI
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