| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can improve reliability and to provide a method for manufacturing the semiconductor device. <P>SOLUTION: This semiconductor device comprises a gate insulating film 23 formed on the main surface of the semiconductor substrate 21, a gate insulating electrode 24 formed on the gate insulating film, a first offset spacer 25 provided adjacent to one side of the gate electrode, a first offset spacer 26-2 provided adjacent to the other side of the first offset spacer, a second spacer 26-1 provided adjacent to the first offset spacer and a source area 28 and drain areas 27-1 and 27-2 separately formed in the main surface of the semiconductor substrate below the first and second spacers in a way that both areas sandwich the gate electrode and first offset spacer. In addition, the feature of this semiconductor device is that the source area 28 is formed at a position deeper d4 than the drain area and the high-impurity concentration of the source area is higher than that of the drain area. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
