| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a low consumption power semiconductor laser element and its manufacturing method capable of being inexpensively manufactured by preventing light from leaking to an electrode side and of low threshold current oscillation and high efficiency operation. <P>SOLUTION: There are formed on an n-GaAs substrate 101 a multiple distortion quantum well active layer 106, a second conductivity type semiconductor layer group (p-AlGaAs first upper cladding layer 108, p-AlGaAs second upper cladding layer 109, p-GaAs etching stop layer 110, p-AlGaAs third upper cladding layer 111, p-GaAs contact layer 112, and p<SP>+</SP>-GaAs contact layer 113). The p-side electrode 114 of a multiple structure formed on the surface of the second conductivity type semiconductor layer group on the side of an upper ridge 130 makes contact with the side surface of the ridge 130 and with the surface of the second conductivity type semiconductor layer group in the vicinity of the ridge 130. In a lowermost layer of the p-side electrode 114, a refractive index to the oscillated laser light is assumed to be ≤1.0. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
