发明名称 METHOD FOR ISOLATING SAPPHIRE BASE MATERIAL AND CRYSTAL MATERIAL THIN FILM IN GALLIUM NITRIDE SYSTEM VERTICAL LIGHT EMITTING DIODE ELEMENT, AND STRUCTURE OF GALLIUM NITRIDE SYSTEM VERTICAL LIGHT EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide uniform heat stress and suitable fusing degree when a thin film and a base material are fused and isolated using laser beam during manufacture of a vertical light emitting diode. <P>SOLUTION: A laser beam array is used as a fusing energy source and irradiation scope of laser beam array is set to become almost equal to the area of a contact surface between thin film waiting for isolation by fusing and a transitional base material. In this case, when the power supply of laser beam array is turned ON, energies of respective laser beams in the array are simultaneously absorbed by a thin film surface. Accordingly, fusing degree of respective portions on the thin film surface becomes uniform considerably and such portions are isolated from the transitional base material. Moreover, since heat stress does not exist at the thin film surface thereof, adhesion with the transitional base material is more suitably isolated uniformly. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268635(A) 申请公布日期 2005.09.29
申请号 JP20040081062 申请日期 2004.03.19
申请人 KYOSHIN KAGI KOFUN YUGENKOSHI 发明人 KO SHOSHUN;RAI BOKUJIN
分类号 H01L33/32 主分类号 H01L33/32
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