| 摘要 |
PROBLEM TO BE SOLVED: To reduce generation of crystal defects, i.e. dislocation, in a compound semiconductor layer in a compound semiconductor having not less than 2% lattice misfit between a substrate and the compound semiconductor layer formed on it. SOLUTION: In a compound semiconductor 1 composed of a buffer layer 3 and a compound semiconductor layer 4 formed on a substrate 2, the surface of at least either of the buffer layer 3 and the compound semiconductor layer 4 is formed into a wavelike surface having an unevenness in a specific direction; thus strain energy in the crystal can be reduced and dislocation density by the crystal defects can be reduced. COPYRIGHT: (C)2005,JPO&NCIPI
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