| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the resistance value of a metallic thin film resistor can be stabilized by etching an insulating film by using the Ar sputter etching technique before a metallic thin film used for forming the metallic thin film resistor is formed on the insulating film. SOLUTION: After connection holes 21 are formed in a second interlayer insulating film 19, the Ar sputter etching is performed on the surface of the insulating film 19 including the inside of the connection holes 21. Successively, a CrSi thin film (metallic thin film) 37 for metallic thin film resistor is formed continuously without breaking the vacuum after the Ar sputter etching is completed. COPYRIGHT: (C)2005,JPO&NCIPI |
