| 摘要 |
PROBLEM TO BE SOLVED: To provide a frame inter line transfer type CCD solid state imaging device in which a low dark output is realized and entering of unwanted charge from an imaging part into an accumulation part is suppressed. SOLUTION: There are provided an imaging part comprising a photodiode (PD) arranged in matrix, a first vertical transfer part, and a first transfer electrode, and an accumulation part comprising a second vertical transfer part and second transfer electrode for accumulating charges from the first vertical transfer part. During video signal outputting period, a transfer electrode having largest region that dose not correspond to a channel stop region among the first transfer electrodes contained in each pixel is applied with a first voltage whose polarity is opposite to a reading pulse, in an under wiring region for connecting the separation region between the first vertical transfer part and the PD with the first transfer electrode in horizontal direction. At least one other transfer electrode is applied with a second voltage higher than the first voltage, and during horizontal blanking period, the first transfer electrode is applied with a line shift pulse, so that the transfer direction of the first vertical transfer part is opposite to that of the second vertical transfer part by the second transfer electrode. COPYRIGHT: (C)2005,JPO&NCIPI
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