发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that an emitter-base junction brings about the fluctuation of critical voltage on which a forward bias begins to operate, so that operating voltage as a protection circuit becomes unstable, since the contact which supplies electric potential to a base is formed on the outside of an emitter, when light enters the base, electric potential fluctuation of the base easily occurs by electrons induced by this (so-called optical latch up occurs), in a conventional input-protection circuit. SOLUTION: A base contact layer which supplies electric potential to the base is formed as a p<SP>+</SP>type fourth diffusion layer 14 just beside and in contact with the emitter in addition outside the emitter 12. This allows the base electric potential to be certainly fixed, the electric potential fluctuation by the optical latch up to be prevented, and a stable protection operation to be attained. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268813(A) 申请公布日期 2005.09.29
申请号 JP20050119630 申请日期 2005.04.18
申请人 NEC ELECTRONICS CORP 发明人 HATANO KEISUKE;NAKASHIBA YASUTAKA
分类号 H01L27/146;H01L21/822;H01L27/04;H01L27/06;(IPC1-7):H01L21/822 主分类号 H01L27/146
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