| 摘要 |
PROBLEM TO BE SOLVED: To suppress the hydrogen incursion to a ferroelectric capacitor. SOLUTION: The ferroelectric storage is provided with a semiconductor substrate 11, a transistor 15, an insulating layer 16 formed on the semiconductor substrate and the transistor, and a ferroelectric capacitor 22 having a lower electrode 18, a ferroelectric material film 19, and a top electrode 20. It has three portions from a first to a third portions 23a, 23b, and 23c formed continuously. The first portion is provided on the insulating layer, and the second portion covers the side of a lower electrode, a ferroelectric material film, and a top electrode, respectively. The third portion is provided with a hydrogen barrier film 23 formed on the upper surface of a top electrode, and an intervention layer 24 formed on the second portion. It has three portions from a fourth to a sixth portions 25a, 25b, and 25c formed continuously. The fourth portion is provided with a first contact portion in contact with at least one part of the first portion, the fifth portion is provided on an intervention layer, and the sixth portion possesses a second hydrogen barrier film 25 provided on the third portion. COPYRIGHT: (C)2005,JPO&NCIPI
|
