SILICON SUBSTRATE HAVING MULTI GROOVE SURFACE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon substrate containing a silicon surface layer having a high porosity to such a degree that it could be regarded as a quantum wire with the aid of a dehydrofluorination process. SOLUTION: The manufacturing method of a silicon substrate having a high porosity surface layer comprises a process of uniformly depositing a metal film on at least a part of the silicon substrate; a process of dipping the silicon substrate on which the film is deposited in a processing solution containing at least hydrochloric acid and nitric acid, and etching the surface on which the metal film is deposited; a process of recovering the silicon substrate from the processing solution after predetermined time; and a process of cutting a remaining part left behind a region where micro grooves are substantially uniformly distributed. The silicon substrate having the high porosity surface layer is manufactured by the foregoing manufacturing method. COPYRIGHT: (C)2005,JPO&NCIPI