发明名称 Process for producing semi-conductor coated substrate
摘要 A process of producing a clean substrate for use in semi-conductor processing in which the substrate is roughened to produce microfissures therein and then treated with a high concentration of a strong acid followed by coating with a material containing at least one metal oxide.
申请公布号 US2005215059(A1) 申请公布日期 2005.09.29
申请号 US20040807716 申请日期 2004.03.24
申请人 DAVIS IAN M;LAUBE DAVID P 发明人 DAVIS IAN M.;LAUBE DAVID P.
分类号 H01L21/302;C23C4/02;C23C4/10;C23C4/12;C23C16/02;C23C16/40;H01L21/304;H01L21/34;H01L21/36;(IPC1-7):H01L21/461;H01L21/469 主分类号 H01L21/302
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