发明名称 |
Process for producing semi-conductor coated substrate |
摘要 |
A process of producing a clean substrate for use in semi-conductor processing in which the substrate is roughened to produce microfissures therein and then treated with a high concentration of a strong acid followed by coating with a material containing at least one metal oxide.
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申请公布号 |
US2005215059(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20040807716 |
申请日期 |
2004.03.24 |
申请人 |
DAVIS IAN M;LAUBE DAVID P |
发明人 |
DAVIS IAN M.;LAUBE DAVID P. |
分类号 |
H01L21/302;C23C4/02;C23C4/10;C23C4/12;C23C16/02;C23C16/40;H01L21/304;H01L21/34;H01L21/36;(IPC1-7):H01L21/461;H01L21/469 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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