Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures

摘要

An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal source composition on the first SiO₂layer, and a second SiO₂ layer on the Group II metal source composition layer.