发明名称 |
Metal gate semiconductor device and manufacturing method |
摘要 |
A method for manufacturing a metal gate includes providing a substrate including a gate electrode located on the substrate. A plurality of layers is formed, including a first layer located on the substrate and the gate electrode and a second layer adjacent the first layer. The layers are etched to form a plurality of adjacent spacers, including a first spacer located on the substrate and adjacent the gate electrode and a second spacer adjacent the first spacer. The first spacer is then etched and a metal layer is formed on the device immediately adjacent to the gate electrode. The metal layer is then reacted with the gate electrode to form a metal gate.
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申请公布号 |
US2005212015(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20040810950 |
申请日期 |
2004.03.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUANG CHIEN-CHAO;CHEN KUANG-HSIN;YANG FU-LIANG |
分类号 |
H01L21/28;H01L21/336;H01L21/82;H01L21/8234;H01L27/02;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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