A dual frequency matching circuit (108) for plasma enhanced semiconductor processing chambers having dual frequency cathodes is provided. The matching circuit includes two matching circuits (202-204) with variable shunts (C1, C4) combined to a common output (212). The matching circuit balances the load of the independent RF sources to that of the plasma in the processing chamber during operation.
申请公布号
WO2005066997(A3)
申请公布日期
2005.09.29
申请号
WO2004US39081
申请日期
2004.11.19
申请人
APPLIED MATERIALS, INC.;SHANNON, STEVEN, C.;HOLLAND, JOHN