| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a simplified manufacturing method to form a light extracting layer which is suitably employed for various kinds of light emitting elements whereas ensuring the effect for reducing total reflection and improvement in the light extracting coefficient. <P>SOLUTION: A titanium nitride layer is formed on a current distributing layer (28), and a double-layer structure for extracting light beam is also formed through cooperation. Such double-layer structure is formed to a certain light emitting material, and the titanium nitride layer includes a microstructure (29). This microstructure (29) is constituted as a nano/net structure. Formation of such microstructure (29) effectively prevents generation of total-reflection of the light generated in a semiconductor active layer (24) in such light emitting material. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
