发明名称 |
Process for producing integrated circuits |
摘要 |
This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional groups for the reduction of a metal oxide layer formed during the production of an integrated circuit. According to the present process the metal oxide layer is at least partly reduced to elemental metal with a reducing agent selected from organic compounds containing one or more of the following functional groups: alcohol (-OH), aldehyde (-CHO), and carboxylic acid (-COOH).
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申请公布号 |
US2005215053(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050110345 |
申请日期 |
2005.04.19 |
申请人 |
SOININEN PEKKA J;ELERS KAI-ERIK |
发明人 |
SOININEN PEKKA J.;ELERS KAI-ERIK |
分类号 |
H01L21/285;H01L21/3105;H01L21/3205;H01L21/768;(IPC1-7):B21B1/00;B21C1/00;B21F1/00;C25D1/08;B32B3/24;B21D39/00;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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