SOLID STATE IMAGING DEVICE AND CAMERA SYSTEM USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a solid state imaging device in which a signal charge generated under a photodiode is hard to be absorbed in a region other than the photodiode and the leakage of the signal charge to the adjacent photodiode is reduced. SOLUTION: The solid state imaging device includes a plurality of pixels each containing: the photodiode formed of a first conductivity type first semiconductor region and a second conductivity type second semiconductor region having a reverse conductivity type to the first conductivity type; and a second conductivity type transistor formed with a gate electrode on the front surface of the second semiconductor region through an insulating film. In the solid stage imaging device, an element isolation region formed with an insulating film in a trench is formed between the adjacent photodiodes. A first conductivity type third semiconductor region is formed on the side wall of the element isolation region. A first conductivity type fourth semiconductor region is formed in the lower part of the element isolation region. COPYRIGHT: (C)2005,JPO&NCIPI