| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-receiving element in which main carriers generated in a light-absorbing layer can be accelerated and injected into a multiplying layer to improve a frequency band characteristic and a minimum reception sensitivity characteristic of the light-receiving element. SOLUTION: The semiconductor light-receiving element is formed by laminating a buffer layer 2, the light-absorbing layer 3, an accelerating layer 4, an electric field attempering layer 5, the multiplication layer 6, a block layer 7, and a contact layer 8 on a semiconductor board. The accelerating layer 4 is formed between the light-absorbing layer 3 and the electric field attempering layer 5, where an energy gap in the accelerating layer 4 decreases as it goes from the the electric field attempering layer 5 to the light-absorbing layer 3, and at least a partial area of the accelerating layer 4 is doped with an impurity. Having such a structure, the accelerating layer 4 accelerates the main carriers to make them migrate to the multiplication layer 6 when the semiconductor light-emitting device operates. The accelerating layer 4 may be composed of a plurality of layers so that the energy gap changes, for example, in a stepped manner. COPYRIGHT: (C)2005,JPO&NCIPI
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