发明名称 OHMIC ELECTRODE STRUCTURAL BODY AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an ohmic electrode structural body which is resistant to a high temperature by obtaining synergistic effects of the reduction of current density inside a contact hole and effects of the improvement of EM (electromigration) durability in the material science, and by extremely suppressing a progress of the EM. SOLUTION: A contract hole 4 space opened to an insulating film 3 is filled with a conductor constituted of materials which are high in EM (electromigration) durability by an Al so that a "contact plug" can be configured, and an Al element diffusion blocking layer 8 is formed between the contact plug and the Al wiring, or the contact plug itself is formed with an Al element diffusion blocking function. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268430(A) 申请公布日期 2005.09.29
申请号 JP20040076680 申请日期 2004.03.17
申请人 NISSAN MOTOR CO LTD 发明人 TANIMOTO SATOSHI
分类号 H01L21/28;H01L21/04;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/28;H01L21/320 主分类号 H01L21/28
代理机构 代理人
主权项
地址