| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an optimum conductive oxygen barrier film and good ferroelectric capacitor characteristics are consistent with each other, and also to provide a method of manufacturing the device. SOLUTION: The semiconductor device is composed of a transistor formed on a semiconductor substrate 18. The device is constituted of a source/drain region 19, a contact plug 12 formed on the source/drain region 19, and the conductive oxygen barrier film 13 formed on the contact plug 12. The device is also composed of a buffer layer 14 formed on the oxygen barrier film 13, a lower electrode 15 formed on the buffer layer 14, and a ferroelectric film 16 formed on the lower electrode 15. In addition, the device is also composed of an upper electrode 17 formed on the ferroelectric film 16. COPYRIGHT: (C)2005,JPO&NCIPI
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