| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for inspecting a memory device for selecting a memory cell close to the peripheral part and the memory twist part of a memory array. SOLUTION: Memory cells are inspected under a stricter inspection voltage and write recovery time, and the memory cells are placed under larger stress, thereby identifying memory cells weak or good near a operational limit. The first column of memory cell blocks is selected at a P1 and a first row is selected at a P2 to inspect the memory cells. At a P3, the last row of the memory cell block is selected to inspect the memory cells. At a P4, a memory row below the twist part in the memory cell block is selected to inspect the memory cells. At a P5, a memory row above the twist part in the subblock is selected to inspect the memory cells. COPYRIGHT: (C)2005,JPO&NCIPI
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